Support

Support Options

Submit a Support Ticket

 

Questions and Answers

Status: Accepting answers

0 Like

Nilanjan Halder

simulation of a p-i-n device with p and n regions of different doping concentrations…

I am a scientist at IIT-Bombay

I am thinking of a solar cell which is a p-i-n device, with an i region and emitter and base will have different doping concentrations

p ( Be doped AlGaAs) – p+ ( Be+ doped GaAs)- i region – n ( Si doped GaAs ) – n+ ( Si+ doped GaAs)

plz tell me whether the above band structure under a electric field can be simulated or not…. so that we can get informations that how the carriers in the i region is affected by the field.. and optimise the doping and p and n region width accordingly…

nilanjan

Report abuse

Your Answer

Please login to answer the question.

3 Responses

  1. 0 Dislike

    Benjamin P Haley

    Hi, The closest tool we have is PN Junction Lab, which can be accessed through ABACUS or as a standalone tool. It will let you specify p and n doping levels in a p-i-n device. It will give you an energy band diagram, but not a full band structure. You can apply a bias to the device, but not an external E field. If you would like to request these features in the tool, you can submit a wish to the tool wishlist, at https://nanohub.org/resources/229/wishlist.

    Reply Report abuse

    Please login to answer the question.

    1. 0 Like 0 Dislike

      Nilanjan Halder

      thank you very much Benjamin for the reply….

      plöt of Energy band diagram is ok for me….

      I just want to be sure…

      Whether i will be able to get the band diagram of a p-i-n device having —>  : a p (emitter)and a n ( base) region consiting of *two or more* compound semiconductors ( eg: GaAs, AlGaAs ) of *different doping concentration* with an sandwiched intrinsic region :

      so that I can optimise the p and n doping concentration of the device to position the intrinsic region….

      Reply Report abuse

      Please login to answer the question.

      1. 0 Like 0 Dislike

        Benjamin P Haley

        Unfortunately PN Junction Lab only allows a single material (Si, Ge, or GaAs) throughout the device.

        Report abuse

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.