why the duplicated charge distriboution under low bias gate is not same as the paper?
I’m trying to duplicate “ Band structure effect in silicon Nanowire electron transport” paper results for N-MOS, but I couldn’t obtain the same result.
In the case of Vg= 0, the charge dispersion graph doesn’t show the same result that Neophytos has got!
The input parameters that I have used are:
Vds= 0.5 v
Metal work function: 4.25 ev
Source and drain doping: e20 cm-3
Same dimension as you have mentioned in his paper 3×3 nm
I highly appreciate if you could let me know where my mistakes are?