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Boundary conditions in N-AlGaAs-pGaAs heterojunction

I am trying to understand the Boundary conditions being used in ADEPT 2.0. Perhaps this is a Naive question.

The example I refer to is the simple AlGaAs-GaAs heterojunction (no illumination) case. I can see that the expression for the electron Quasi Fermi level on the N-AlGaAs side is -4.5+(Va/2) and that the expression for the hole Quasi-Fermi level on the p-GaAs side is -4.5-(Va/2).

It is not clear to me what the boundary conditions are for

a) Electron Quasi Fermi level on the p-GaAs side b) Hole Quasi Fermi level on the n-AlGaAs side

Typically, for a pn diode we fix one end of the Quasi Fermi levels to the equilibrium value (eg: pn diode lab on nanohub). But this seems to not be the case for the ADEPT deck.

Any help will be greatly appreciated.

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