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Anonymous

When we deposte the gold nanoparticle on active material in transistors, the gap between two nanoparticle is 0.5 nm, what type of tunneling barrier will be forming?

I have made a Pentacene memory transistor, here I have deposited the gold nano particles on active material with different nanometer spacing between gold nano particles and pentacene,finally the spacing between two is 0.5nm. So what type of tunneling barrier will be forming?

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