Problems with HEMT
Hi I want to simulate the HEMT device structure. Even after applying all necessary device parameters and boundary conditions, the simulator does not converge(shows a matrix assignment problem) and the output log shows the material parameters have been taken for Silicon. The output log also shows the welcome note for nanoMOS 3.1, not 4.0. Did anyone face the same problem? How could I get this simulation correct? Thanks in advance.