Is there a way to change the value of the intrinsic carrier concentration (n_{i}) in PADRE? It appears that PADRE uses a value of 5.5 x 10^{9}, as opposed to the generally accepted value of 1.5 x 10^{10} for 300 K.

I found this by comparing PADRE output data with hand calculations for the majority and minority carrier concentrations in a PN diode.

In the P region of my diode, I use a doping of 1.07 x 10^{15} of boron. At equilibrium, this gives a majority carrier concentration of 1.07 x 10^{15} cm^{-3} and a minority carrier concentration of n=(1.5 x 10^{10})^{2}/1.07 x 10^{15} = 2.1 x 10^{5}. PADRE correctly matches the majority carrier concentration but gives a minority carrier concentration of 2.86 x 10^{4}, which is over a factor of 7 off.

In the N region of my diode, I use a doping of 7.44 x 10^{13} of phosphorus. At equilibrium, this gives a majority carrier concentration of 7.44 x 10^{13} cm^{-3} and a minority carrier concentration of p=(1.5 x 10^{10})^{2}/7.44 x 10^{13} = 3.2 x 10^{6}. PADRE again correctly matches the majority carrier concentration but gives a minority carrier concentration of 4.1 x 10^{5}, which is also off by over a factor of 7.

Using the PADRE minority carrier values and the doping concentrations to back-calculate n_{i}, I find that PADRE uses a value of 5.5 x 10^{9} as the intrinsic carrier concentration at 300 K.

Please let me know how I can change this value!

Thank you