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vanya srivastav @ on
why does only p-type potential under applied bias
During simulations for pn junction under different applied bias conditions , why does the elctrosatic potential vary only for the p side , while for n side it is fixed? I have to perform simultions for HgCdTe material. This material does not exist in your library Can I get the code for PIN junction electrostatic potential, carrier conc. and recombination rates.
Benjamin P Haley @ on
Hi, Thanks for using PN Junction Lab! Sorry for the delay in answering your question; the tag system sometimes does not apply all the necessary tags for us to see new questions for NCN supported tools. I was not able to replicate your issue; when I simulate a pn junction with various applied biases, the electrostatic potential does not vary on the p side. Can you give us more information about your simulation? Currently the PN Junction Lab tool is limited to the materials shown (Si, Ge, GaAs), and the code is closed source, not available outside the development team.
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Saumitra Raj Mehrotra @ on
Potential varies only for side as n side is grounded, Applied bias is applied at p side. HgCdTe might not be used as input deck is only for three materials. You can however write a script for yourself and submit to PADRE for running your own type of simulations. Output log of PADRE based codes give out the input deck for it. I hope the information helps you.
thanks! Saumitra
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