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silicon thickness
hi, according to chapter 2 of ren's thesis (fig.2.8), with decrease of silicon thickness, increase of on-current is observed but simulation results of nanomos shows opposite behaviors.why?
Asked by Anonymous - 10 months 1 week ago - 2 Responses
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Carlos Malheiro said:
0 0 Login to vote Hello!
Because if you decrease the silicon thickness shall receibe estimulation on the chapter 3 and 4 and for an increase of oncurrent shall have a great thin spectrum of colorazation Cplus, D and H9 with clorophilius zen .
Maybe you just didn't adjust the particules with the components I think?!
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Yang Liu said:
+2 0 Login to vote Please be more specific on the simulations you performed with nanoMOS, like the body thickness, insulator thickness, workfunction, gate biases and drain biases when you compare the current. Without more details of your observation, we are unable to check this further.
Thanks,
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