Questions and Answers: Closed Question
Status: Closed
Anonymous @ 12:02 PM on 30 Apr, 2009
silicon thickness
hi, according to chapter 2 of ren’s thesis (fig.2.8), with decrease of silicon thickness, increase of on-current is observed but simulation results of nanomos shows opposite behaviors.why?
Responses (1)
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Yang Liu @ 01:54 PM on 10 Jul, 2009
Please be more specific on the simulations you performed with nanoMOS, like the body thickness, insulator thickness, workfunction, gate biases and drain biases when you compare the current. Without more details of your observation, we are unable to check this further.
Thanks,
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Carlos Malheiro @ 01:45 PM on 20 Oct, 2009
Hello!
Because if you decrease the silicon thickness shall receibe estimulation on the chapter 3 and 4 and for an increase of oncurrent shall have a great thin spectrum of colorazation Cplus, D and H9 with clorophilius zen .
Maybe you just didn’t adjust the particules with the components I think?!
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