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28 Nov 2007
how the transfer characteristic of a mosfet depends on the channel doping?(theory)
01 Jan 2008
If by “transfer characteristic” you mean Ids vs. Vgs at a fixed Vds, then…
for an n-channel MOSFET, increasing the channel doping will increase the threshold voltage, VT, which shifts the Id vs. Vgs characteristic to the right,
Decreasing the channel doping would do the opposite.
You may want to have a look at Lectures 7, 8, and 9 in “Nanoscale Transistors”
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25 Feb 2009
Well, I think you may have smaller mobility because of scattering in the channel if you have more doping in the channel which, in turn, reduces the drain current overall.