George Pau @ on
boundary conditions for the poisson equation
I have simulated a case where Vg = 0.4V and Vd =0V. However, when I look at the potential plot, it appears that the potential at the boundary where the gate is 0V. Is it simply a plotting error, or is Vg not applied directly? If Vg is not applied directly, what is the boundary condition at the gate? Is the poisson equation solved for the whole domain or only in the silicon and excluding the oxide?