Philip David Flammer @ on
deep accumulation for small devices carrier density/availability of customizable PADRE
I have a question about the effectiveness of this tool in predicting carrier density for accumulation situations at say (5 V) for thin devices (2-3nm high k oxide) in the high frequency regime. When I look at the carrier concentrations, I can’t get enough points close to the surface (due to the limitation of the grid—1000 points in the semiconductor) to get convergence. Is there a way to increase the number of points possible in the silicon, or is it fair in the model to solve a thick silicon model, and then thin it down setting the edge carrier concentration equal to what it was at that point in the thicker model (to get a smaller grid)?
Also, do you know if PADRE is a free software that I can obtain to run custom simulations, or is it commercial? I haven’t been able to find information on this.
Thank you very much in advance!