Nilanjan Halder @ on
simulation of a p-i-n device with p and n regions of different doping concentrations…
I am a scientist at IIT-Bombay
I am thinking of a solar cell which is a p-i-n device, with an i region and emitter and base will have different doping concentrations
p ( Be doped AlGaAs) – p+ ( Be+ doped GaAs)- i region – n ( Si doped GaAs ) – n+ ( Si+ doped GaAs)
plz tell me whether the above band structure under a electric field can be simulated or not…. so that we can get informations that how the carriers in the i region is affected by the field.. and optimise the doping and p and n region width accordingly…
nilanjan
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Benjamin P Haley @ on
Hi, The closest tool we have is PN Junction Lab, which can be accessed through ABACUS or as a standalone tool. It will let you specify p and n doping levels in a p-i-n device. It will give you an energy band diagram, but not a full band structure. You can apply a bias to the device, but not an external E field. If you would like to request these features in the tool, you can submit a wish to the tool wishlist, at https://nanohub.org/resources/229/wishlist.
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Nilanjan Halder @ on
thank you very much Benjamin for the reply….
plöt of Energy band diagram is ok for me….
I just want to be sure…
Whether i will be able to get the band diagram of a p-i-n device having —> : a p (emitter)and a n ( base) region consiting of *two or more* compound semiconductors ( eg: GaAs, AlGaAs ) of *different doping concentration* with an sandwiched intrinsic region :
so that I can optimise the p and n doping concentration of the device to position the intrinsic region….
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Benjamin P Haley @ on
Unfortunately PN Junction Lab only allows a single material (Si, Ge, or GaAs) throughout the device.
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