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problem: electric field in oxide is not constant

Hi all, I am new to MEDICI and currently simulating an SOI structure on it. Dimensions: gate oxide: 20nm, silicon film=100nm, Buried Oxide=400nm, channel length=300nm

Problem is the plot of total electric field along a vertical cross-section of the device i.e. through front oxide, silicon film and Buried Oxide(BOX) is showing a varying electric field in BOX region. This is contradictory to poisson equation which says gradient of electric field= (Net charge density/epsilon). I have put no oxide charges(Q interface etc.) I refined the mesh but to no result. Can somebody help me to trace the source of error? Thanks in advance!!

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