Support

Support Options

Submit a Support Ticket

 

Questions and Answers

Status: Accepting answers

0 Like

Ahmet Ceyhan

Is it possible to dope the nanowire n-type at the source end and p-type at the drain end using this tool?

Report abuse

1 Responses

  1. 0 Like 0 Dislike

    Saumitra Raj Mehrotra

    Hi, It should be possible to do it. However if you want to simulate a PIN tunnel FET , it would not be possible as there isnt any coupling between valence and conduction bands.

    thanks

    Reply Report abuse

    Please login to answer the question.

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.