Part of my research is dealing with Low Freq. Noise modeling in AlGaN/GaN-based HFETs where I need to have a precise calculation of the energy sub-bands of the channel. In this regard, I modeled energy sub-bands based on Delagebeaudeuf model assuming a dependence of the energy states on the 2D electron concentration according to E_i = Gamma_i * (n_2D) ^ (2/3). Having done this and read couple of papers including “Self-Consistent Subband Calculations of AlGaN/GaN Single Heterojunction,” ETRI Journal, vol. 24, 2002), I came to this conclusion that exchange-correlatoin effect can play a significant role in determining the subbands of AlGaN/GaN structure where the 2D electron concentration is relatively large as compared to that of AlGaAs/GaAs. My question is if my conclusion is correct and if yes if anyone has already done this and if in anyways I can find the codes already implemented.

Thanks