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Ashish Agrawal @ 02:00 PM on 08 Sep, 2010
Exactly same subband energies for 2 ladders
I am simulating DG MOSCAP with Metal gates. Doping-7e18 Metal1 and 2 WF – 4.3eV Voltage – 0 to 4 V SiO2 thickness 1 nm (100) crystal Voltage varying on both gates
In the plot for subband energies vs Voltage, the E11 is exactly overlapping with E21. THis is also seen in subband occupancy vs Vg plot.
Is that a bug with DG simulation in SCHRED?
Please Reply. Thank you.
Ashish
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Anonymous @ 11:15 PM on 08 Mar, 2011
It happens to me too when I replicate your settings, I doubt it is a bug but I can not make an assumption at this point. I’ll keep looking at the problem.
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