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Exactly same subband energies for 2 ladders
I am simulating DG MOSCAP with Metal gates.
Doping-7e18
Metal1 and 2 WF – 4.3eV
Voltage – 0 to 4 V
SiO2 thickness 1 nm
(100) crystal
Voltage varying on both gates
In the plot for subband energies vs Voltage, the E11 is exactly overlapping with E21. THis is also seen in subband occupancy vs Vg plot.
Is that a bug with DG simulation in SCHRED?
Please Reply. Thank you.
Ashish
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Anonymous @ on
It happens to me too when I replicate your settings, I doubt it is a bug but I can not make an assumption at this point. I’ll keep looking at the problem.
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