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fregonese @ 10:44 AM on 28 Sep, 2010
Is it possible to define a dual-gate CNTFET into TCAD Vides?
Hello, I’m interested to simulate a Dual-gate CNTFET with two independent gates. The back-gate is wider than the front gate. The outer part of the device is controlled by the back gate while the inner part is controlled by the front gate as described in 1. The device can be N or P FET depending of back gate condition.
Is it possible to define this kind of devices into TCAD Vides?
1 Y. Lin, J. Appenzeller, Z. Chen, Z. Chen, H. Cheng, et P. Avouris, “High-performance dual-gate carbon nanotube FETs with 40-nm gate length,” IEEE Electron Device Letters, vol. 26, 2005, p. 823-825. Thank you Regards
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Gianluca Fiori @ 06:15 AM on 13 Oct, 2010
You certainly can do that. Try defining the structure you want, by specifying the input deck by yourself, and not by using the pre-defined structures.
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