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Philip David Flammer

Useful for very high doping reverse bias conditions?

I want to know how suitable this tool is for calculating IV characteristics for very high doped pn junctions into the 10(18) – 10(19) /cm3 under reverse bias conditions. It seems like as you increase the carrier concentrations to these high levels there should be more reverse current as the doping increases, but that doesn’t seem to be the case going from 10(17) ranging up to the mid 10(18) s.

If this tool isn’t useful for those kinds of simulations, are there any tools you can suggest?

Thanks.

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    Saumitra Raj Mehrotra

    Hi, As doping is increased the p-n barrier increases leading to a reduced reverse bias current. Are you trying to see zener effect?

    thanks

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      Philip David Flammer

      Hi. If it was working, that was my expectation. No, the voltages aren’t high enough for a Zener effect I don’t think. I just wasn’t sure if the decreased depletion width would increase the direct tunneling rate fast enough to outweight the higher p-n barrier height.

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