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How to model metal/source drain MOSFET in nanoscale device simulators?

Hello; I want to model metal source/drain MOSFET in nanoscale device simulators. How can I define schottky contact at source/drain channel interface? Thanks

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    Select appropriate metal such that the junction is ohmic/shottky as your requirement. Calculate metal semiconductor work function difference, phi_ms. Add this phi_ms to the applied bias at source.


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