Support

Support Options

Submit a Support Ticket

 

Questions and Answers

Status: Closed

0 Like

ZAHRA AHANGARI

How to model metal/source drain MOSFET in nanoscale device simulators?

Hello; I want to model metal source/drain MOSFET in nanoscale device simulators. How can I define schottky contact at source/drain channel interface? Thanks

Report abuse

Chosen Answer

  1. 0 Like 0 Dislike

    RIZVI AHMED

    Select appropriate metal such that the junction is ohmic/shottky as your requirement. Calculate metal semiconductor work function difference, phi_ms. Add this phi_ms to the applied bias at source.

    Thanks.

    Cancel Report abuse

    Please login to answer the question.

0 Responses

No other responses made.

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.