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@ 03:29 PM
on 27 Jun 2008
Short channel modeling using this tool?
The simulation doesn’t seem to model short channel effects. When I simulated IV (Id-VG and Id-Vd) for 70nm, 55nm, and 50nm drawn L, I hardly got any difference in the values?
@ 01:34 PM
on 29 Jan 2009
Degradation of subthreshold swing is obvious for uniformly doped channel as the channel length is decreased from 70nm to 50nm. For Gaussian source/drain with Halo doping, subthreshold swing degradation is more apparent for channel lengths below 50nm.
Benjamin P Haley
@ 11:24 PM
on 25 Jan 2009
I apologize for the great delay in responding to your question. I will speak with the MOSFet developers about this issue.
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