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Anurag Mittal

Short channel modeling using this tool?

Hi, The simulation doesn’t seem to model short channel effects. When I simulated IV (Id-VG and Id-Vd) for 70nm, 55nm, and 50nm drawn L, I hardly got any difference in the values?

  1. tool:mosfet

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    Himadri Pal

    Hi, Degradation of subthreshold swing is obvious for uniformly doped channel as the channel length is decreased from 70nm to 50nm. For Gaussian source/drain with Halo doping, subthreshold swing degradation is more apparent for channel lengths below 50nm.

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    Benjamin P Haley

    Hi, I apologize for the great delay in responding to your question. I will speak with the MOSFet developers about this issue.

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