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Manoj Kumar Sharma @ 09:27 AM on 03 Jan, 2012
MuGFET scaling
Hi, I was working on MuGFET simulator but for strange reasons PROPHET simulator does not work. I have one more doubt. The given gate length is 45nm but I want to simulate for say 22nm length. To do this which all parameters should I change. Thank you for your help.
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SungGeun Kim @ 11:55 AM on 05 Jan, 2012
I have tried 22 nm with prophet and it worked fine. What did you change anything else than the gate length?
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Manoj Kumar Sharma @ 01:50 PM on 05 Jan, 2012
Thank you very much for your reply. I changed channel width also and tried to simulate 15nm but the result was absurd. Do you have any reccommendation for study materials on MuGFET. I am performing to simulation as part of my course and I wonder if I can change more paraeters and do the simulations.
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SungGeun Kim @ 09:57 PM on 22 Jan, 2012
If you reduced the channel length and width, you also have to reduce the oxide thickness because reduced channel length may induce some short channel effects and you need to also change workfunction to have proper off-current. I chose oxide thickness 1.06 nm and workfunction 4.8 (Have a look at the material -> bandstructure option). It seems the IV curve looks fine. Please also consider that the overlap region length (y dimension). If you really want to have physical length 22 nm. You have to have longer gate length. If you have 2+2=4 nm overlap then 26 nm gate length will be needed to have 22 physical gate length.
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SungGeun Kim @ 09:59 PM on 22 Jan, 2012
To study about MuGFET, you may want to watch some of the Lundstrom’s lecture in nanohub or have a look at textbooks like Taur and Ning’s Fundamentals of Modern VLSI Devices.
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SungGeun Kim @ 10:06 PM on 22 Jan, 2012
To be more specific, you can look at Lundstrom’s ECE 612 lectures and for example: in SOI electronics https://nanohub.org/resources/6014, he talks about double gate structre.
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