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1. I. Foster, (2005), "Service-Oriented Science", Science, American Association for the Advancement of Science, 308, 5723: pg. pg: 814-817, 05, (DOI: 10.1126/science.1110411). Cited by: 338
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2. Mark Lundstrom, X. Ren, (2002), "Essential physics of carrier transport in nanoscale MOSFETs", Electron Devices, IEEE Transactions on, IEEE, 49, 1: pg. pg: 133-141, 01, (DOI: 10.1109/16.974760). Cited by: 307
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3. A. Rahman, Jihua Guo, S. Datta, Mark Lundstrom, (2003), "Theory of ballistic nanotransistors", Electron Devices, IEEE Transactions on, IEEE, 50, 9: pg. pg: 1853-1864, 09, (DOI: 10.1109/TED.2003.815366). Cited by: 285
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4. S. Adabala, V. Chadha, Puneet Chawla, R.J. Figueiredo, J.A.B. Fortes, Ivan Krsul, A. Matsunaga, M. Tsugawa, Jian Zhang, M. Zhao, L. Zhu, Xiaomin Zhu, (2004), "From virtualized resources to virtual computing grids: the In-VIGO system", Future Generation Computer Systems, Elsevier, 21, 6: pg. pg: 896-909, 02, (DOI: 10.1016/j.future.2003.12.021). Cited by: 209
BibTex | EndNote | | Resources cited: [1]
5. Z. Ren, R. Venugopal, Sebastian Goasguen, S. Datta, Mark Lundstrom, (2003), "nanoMOS 2.5: A two-dimensional simulator for quantum transport in double-gate MOSFETs", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE, 50, 9: pg. pg: 1914-1925, 09, 0018-9383, (DOI: 10.1109/TED.2003.816524). Cited by: 152
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6. Keunwoo Kim, Jerry Fossum, (2001), "Double-Gate CMOS: Symmetrical- Versus Asymmetrical-Gate Devices", Electron Devices, IEEE Transactions on, IEEE, 48, 2: pg. pg: 294-299, 02, 0018-9383, (DOI: 10.1109/16.902730). Cited by: 148
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7. S. Datta, (2004), "Electrical resistance: an atomistic view", IOP Electronic Journals, Nanotechnology, IOP Publishing, 15, 7: pg. pg: S433-S451, 07, S433-S451, (DOI: 10.1088/0957-4484/15/7/051). Cited by: 141
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8. P. Ruth, J. Rhee, D. Xu, Rick Kennell, Sebastian Goasguen, (2006), "Autonomic Live Adaptation of Virtual Computational Environments in a Multi-Domain Infrastructure", NA, Autonomic Computing, 2006. ICAC'06. IEEE International Conference on, : pg. pg: 5-14, IEEE, 06, 1-4244-0175-5, (DOI: 10.1109/ICAC.2006.1662376 ). Cited by: 128
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9. G.P. Lansbergen, Rahib Rahman, Cameron Wellard, J. Caro, N. Collaert, S. Biesemans, Insoo Woo, G Klimeck, Lloyd Hollenberg, Sven Rogge, (2008), "Gate induced quantum confinement transition of a single dopant atom in a Si FinFET", Nature Physics, Nature Publishing Group, 4, 8: pg. pg: 656-661, 06, (DOI: 10.1038/nphys994). Cited by: 128
BibTex | EndNote | | Resources cited: [1]
10. Mathieu Lusier, Andreas Schenk, Wolfgang Fichtner, G Klimeck, (2006), "Atomistic Simulation of Nanowires in the sp3d5s* Tight-Binding Formalism: from Boundary Conditions to Strain Calculations", PHYSICAL REVIEW B, APS, 74, 20: pg. pg: 205323-1-205323-12, 11, (DOI: 10.1103/PhysRevB.74.205323). Cited by: 106
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11. Ruth Pordes, Don Petravick, Bill Kramer, Doug Olson, Miron Livny, Alain Roy, Paul Avery, Kent Blackburn, Torre Wenaus, Frank Würthwien, I. Foster, Rob Gardner, Alan Blatecky, John McGee, Rob Quick, (2007), "The Open Science Grid", Journal Of Physics: Conference Series, Journal of Physics: Conference Series, 78, : pg. pg: 1-15, IOP Publishing, 06, (DOI: 10.1088/1742-6596/78/1/012057). Cited by: 101
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12. A. Ritenour, A. Khakifirooz, D.A. Antoniadis, R.Z. Lei, W. Tsai, A. Dimoulas, G. Mavrou, Y. Panayiotatos, (2006), "Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack", Applied Physics Letters, 88, 32767: pg. pg: 132107-1-132107-3, 03, (DOI: ). Cited by: 98
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13. A. Raychowdhury, Saibal Mukhopadhyay, K. Roy, (2004), "A circuit-compatible model of ballistic carbon nanotube field-effect transistors", Computer-aided Design Of Integrated Circuits And Systems, Ieee Transactions On, IEEE, 23, 10: pg. pg: 1411-1420, 10, 0278-0070, (DOI: 10.1109/TCAD.2004.835135). Cited by: 98
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14. S.V. Kumar, C.H. Kim, S.S. Sapatnekar, (2006), "An Analytical Model for Negative Bias Temperature Instability", 2006 International Conference On Computer-aided Design, 2006 International Conference on Computer-Aided Design, San Jose, CA, : pg. pg: 493-496, IEEE, San Jose, CA, 11, 1092-3152, 1-59593-389-1, (DOI: 10.1109/ICCAD.2006.320163). Cited by: 97
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15. E. Pop, Sanjiv Sinha, K.E. Goodson, (2006), "Heat Generation and Transport in nanometer-scale Transistors", Proceedings Of The IEEE, IEEE, 94, 8: pg. pg: 1587-1601, 08, 0018-9219, (DOI: 10.1109/JPROC.2006.879794). Cited by: 97
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16. P. Ruth, P. McGachey, D. Xu, (2005), "VioCluster: Virtualization for Dynamic Computational Domains", IEEE International Conference On Cluster Computing, Cluster Computing, 2005. IEEE International, : pg. pg: 38361-, IEEE, 09, 0-7803-9486-0/1552-5244, (DOI: 10.1109/CLUSTR.2005.347064). Cited by: 92
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17. J. Wang, A. Rahman, Avik Ghosh, G Klimeck, Mark Lundstrom, (2005), "On the validity of the parabolic effective-mass approximation for the I-V calculation of silicon nanowire transistors", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE, 52, 7: pg. pg: 1589-1595, 07, 1557-9646, (DOI: 10.1109/TED.2005.850945). Cited by: 89
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18. G Klimeck, Shaikh Ahmed, Hansang Bae, Neerav Kharche, Rahib Rahman, Steven Clark, B.P. Haley, Sunhee Lee, Maxim Naumov, Hoon Ryu, Faisal Saied, M Prada, M. Korkusinski, Timothy Boykin, (2007), "Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D - Part I: Models and benchmarks", Electron Devices, IEEE Transactions on, IEEE, 54, 9: pg. pg: 2079-2089, 09, 0018-9383, (DOI: 10.1109/TED.2007.902879). Cited by: 86
BibTex | EndNote | | Resources cited: [1], [2]|Electronic paper
19. V. Trivedi, Jerry Fossum, (2005), "Quantum-mechanical effects of the threshold voltage of undoped double-gate MOSFETs", Electron Device Letters, IEEE, IEEE, 26, 8: pg. pg: 579-582, 08, 0741-3106 (DOI: 10.1109/LED.2005.852741). Cited by: 80
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20. M. Paulsson, S. Datta, (2003), "Thermoelectric effect in molecular electronics", PHYSICAL REVIEW B, APS, 67, 24: pg. pg: 241403-1-241403-4, 06, 1098-0121, (DOI: 10.1103/PhysRevB.67.241403). Cited by: 75
BibTex | EndNote | | Resources cited: [1], [2], [3]
21. Gengchiau Liang, Jie Xiang, Neerav Kharche, G Klimeck, Charles Lieber, Mark Lundstrom, (2007), "Performance Analysis of a Ge/Si Core/Shell Nanowire Field-Effect Transistor", Nano Letters, ACS Publications, 7, 3: pg. pg: 642-646, 02, (DOI: 10.1021/nl062596f). Cited by: 74
BibTex | EndNote | | Resources cited: [1], [2]
22. A. Rahman, Mark Lundstrom, Avik Ghosh, (2005), "Generalized effective-mass approach for n-type metal-oxide-semiconductor field-effect transistors on arbitrarily oriented wafers", Journal of Applied Physics, AIP, 97, 5: pg. pg: 0-0, 02, (DOI: 10.1063/1.1845586). Cited by: 73
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23. N. Neophytou, Abhijeet Paul, Mark Lundstrom, G Klimeck, (2008), "Bandstructure Effects in Silicon Nanowire Electron Transport", Electron Devices, IEEE Transactions on, IEEE, 55, 6: pg. pg: 1286-1297, 06, (DOI: 10.1109/TED.2008.920233). Cited by: 73
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24. L. Chang, K.J. Yang, Yee-Chia Yeo, I. Polishchuk, Tsu-Jae King, Chenming Hu, (2002), "Direct-tunneling gate leakage current in double-gate and ultrathin body MOSFETs", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE, 49, 12: pg. pg: 2288-2295, 12, (DOI: 0.1109/TED.2002.807446). Cited by: 68
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25. Jing Guo, S. Datta, Mark Lundstrom, Markus Brink, Paul McEuen, Ali Javey, Hongjie Dai, Hyoungsub Kim, Paul McIntyre, (2002), "Assessment of Silicon MOS and Carbon Nanotube FET Performance Limits Using a General Theory of Ballistic Transistors", IEEE IEDM, Electron Devices Meeting, 2002. IEDM'02. Digest. International, : pg. pg: 711-714, IEEE, 12, (DOI: ). Cited by: 65
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26. Jerry Fossum, Lixin Ge, M.-H. Chiang, V. Trivedi, M. Chowdhury, L. Mathew, G. Workman, B.-Y. Nguyen, (2004), "A process/physics-based compact model for nonclassical SMOS device and circuit design", Solid-State Electronics, Elsevier, 48, 6: pg. pg: 919-926, 06, (DOI: 10.1016/J.sse.2003.12.030). Cited by: 62
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27. D.A. Antoniadis, Ingvar Aberg, C. Ni Chleirigh, O. Nayfeh, A. Khakifirooz, Judy Hoyt, (2006), "Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations", IBM Journal Of Research And Development, IBM, 50, 4: pg. pg: 363-376, 07, 0018-8646, (DOI: ). Cited by: 62
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28. Nancy Wilkins-Diehr, D.B. Gannon, G Klimeck, Scott Oster, Sudhakar Pamdighantam, (2008), "TeraGrid Science Gateways and Their Impact on Science", Computer, IEEE, 41, 11: pg. pg: 32-41, 11, (DOI: 10.1109/MC.2008.470). Cited by: 53
BibTex | EndNote | | Resources cited: [1], [2], [3]
29. Mathieu Lusier, Andreas Schenk, W. Fichtner, (2006), "Quantum transport in two- and three-dimensional nanoscale transistors: Coupled mode effects in the nonequilibrium Green's function formalism", Journal of Applied Physics, AIP, 100, 4: pg. pg: 043713-1-043713-12 08, (DOI: 10.1063/1.2244522). Cited by: 51
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30. F. Zahid, M. Paulsson, E. Polizzi, Avik Ghosh, L. Siddiqui, S. Datta, (2005), "A self-consistent transport model for molecular conduction based on extended Huckel theory with full three-dimensional electrostatics", The Journal of Chemical Physics, 123, 6: pg. pg: 064707-1-064707-10, 08, (DOI: 10.1063/1.1961289). Cited by: 50
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31. Raseong Kim, S. Datta, Mark Lundstrom, (2009), "Influence of dimensionality on thermoelectric device performance", Journal of Applied Science, AIP, 105, 3: pg. pg: 034506-1-034506-6, 02, (DOI: 10.1063/1.3074347). Cited by: 49
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32. Yang-Kyu Choi, Tsu-Jae King, Chenming Hu, (2002), "Spacer FinFET: nanoscale double-gate CMOS technology for the terabit era", Solid-State Electronics, Elsevier, 46, 10: pg. pg: 1595-1601, 10, (DOI: ). Cited by: 48
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33. Siyuranga Koswatta, S. Hasan, Mark Lundstrom, M.P. Anantram, Dmitri Nikonov, (2007), "Non-equilibrium Green's function treatment of phonon scattering in carbon-nanotube transistors", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE, 54, 9: pg. pg: 2339-2351, 08, (DOI: 10.1109/TED.2007.902900). Cited by: 48
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34. Rahib Rahman, Cameron Wellard, Forrest Bradbury, M Prada, Jared Cole, G Klimeck, Lloyd Hollenberg, (2007), "High Precision Quantum Control of Single Donor Spins in Silicon", Physical Review Letters, APS, 99, 3: pg. pg: -, 07, (DOI: 10.1103/PhysRevLett.99.036403). Cited by: 47
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35. G Klimeck, Michael McLennan, Sean Brophy, George Adams, Mark Lundstrom, (2008), "nanoHUB.org: Advancing Education and Research in Nanotechnology", IEEE Computers In Engineering And Science, IEEE, 10, 5: pg. pg: 17-23, 09, (DOI: 10.1109/MCSE.2008.120). Cited by: 45
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36. John Melcher, Shuiqing Hu, Arvind Raman, (2007), "Equivalent Point-Mass Models of Continuous Atomic Force Microscope Probes", Applied Physics Letters, 91, 5: pg. pg: -, 07, (DOI: 10.1063/1.2767173). Cited by: 45
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37. Ian O'Connor, Junchen Liu, Frédéric Gaffiot, Fabien Prégaldiny, Christophe Lallement, Cristell Maneux, Johnny Goguet, Sebastien Frégonese, Thomas Zimmer, Lorena Anghel, Tong-Trinh Dang, Régis Leveugle, (2007), "CNTFET Modeling and Reconfigurable Logic-Circuit Design", IEEE Transactions On Circuits And Systems--i: Regular Papers, IEEE, 54, 11: pg. pg: 2365-2379, 11, 1549-8328, (DOI: 10.1109/TCSI.2007.907835). Cited by: 43
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38. J. Wang, A. Rahman, Avik Ghosh, G Klimeck, Mark Lundstrom, (2005), "Performance evaluation of ballistic silicon nanowire transistors with atomic-basis dispersion relations", Applied Physics Letters, 86, 9: pg. pg: 093113-1-093113-3, 02, (DOI: 10.1063/1.873055). Cited by: 42
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39. D.Q. Andrews, R.P. Van Duyne, M.A. Ratner, (2008), "Stochastic Modulation in Molecular Electronic Transport Junctions: Molecular Dynamics Coupled with Charge Transport Calculations", Nano Letters, ACS Publications, 8, 4: pg. pg: 1120-1126, 03, (DOI: 10.1021/nl073265l). Cited by: 42
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40. F. Zahid, M. Paulsson, S. Datta, (2003), "Electrical Conduction through Molecules", Advanced Semiconductors and Organic Nano-Techniques, Advanced Semiconductors and Organic Nano-Techniques, Academic Press, : pg. pg: 2-41, 07, (DOI: ). Cited by: 41
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41. Z. Ren, R. Venugopal, S. Datta, Mark Lundstrom, (2001), "Examination of design and manufacturing issues in a 10 nm double gate MOSFET using nonequilibrium Green's function simulation", Electron Devices Meeting, 2001. IEDM Technical Digest. International, Electron Devices Meeting, 2001. IEDM Technical Digest. International, : pg. pg: 541-544, IEEE, 12, 0-7803-7050-3 (DOI: 10.1109/IEDM.2001.979435 ). Cited by: 40
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42. L. Chang, K.J. Yang, Yee-Chia Yeo, Yang-Kyu Choi, Tsu-Jae King, Chenming Hu, (2001), "Reduction of direct-tunneling gate leakage current in double-gate and ultra-thin body MOSFETs", International Electron Devices Meeting, 2001. IEDM Technical Digest, Electron Devices Meeting, 2001. IEDM Technical Digest. International, : pg. pg: 5.2.1-5.2.4, IEEE, 12, 0-7803-7050-3, (DOI: 10.1109/IEDM.2001.979428). Cited by: 39
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43. J. Wang, E. Polizzi, Mark Lundstrom, (2003), "A computational study of ballistic silicon nanowire transistors", Electron Devices Meeting, 2003. IEDM, Electron Devices Meeting, 2003. IEDM'03 Technical Digest. IEEE International, : pg. pg: 29.5.1-29.5.4, IEEE, 12, 0-7803-7872-5, (DOI: 10.1109/IEDM.2003.1269375). Cited by: 38
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44. G Klimeck, Shaikh Ahmed, Neerav Kharche, M Prada, M. Korkusinski, Timothy Boykin, Muhammad Usman, (2007), "Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D - Part II: Applications", Electron Devices, IEEE Transactions on, IEEE, 54, 9: pg. pg: 2090-2099, 09, 0018-9383, (DOI: 10.1109/TED.2007.904877). Cited by: 38
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45. S. O'Leary, Brian Foutz, Michael Shur, Lester Eastman, (2006), "Steady-State and Transient Electron Transport Within the III-V Nitride Semiconductors, GaN, AlN, and InN: A Review", Journal Of Materials Science: Materials In Electronics, Springer, 17, 2: pg. pg: 87-126, 02, (DOI: 10.1007/s10854-006-5624-2). Cited by: 37
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46. Arvind Raman, John Melcher, Ryan Tung, (2008), "Cantilever Dynamics in Atomic Force Microscopy", Nanotoday, Elsevier, 3, 1: pg. pg: 20-27, 02, (DOI: 10.1016/S1748-0132\08)70012-4). Cited by: 37
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47. Michael Thomas, J. Burruss, L. Cinquini, G.C. Fox, D.B. Gannon, L. Gilbert, Gregor von Laszewski, Keith Jackson, D. Middleton, R. Moore, M. Pierce, B. Plale, A. Rajasekar, R. Regno, E. Roberts, D. Schissel, A. Seth, W. Schroeder, (2005), "Grid portal architectures for scientific applications", Journal Of Physics: Conference Series, Journal of Physics: Conference Series, 16, : pg. pg: 596-600, IOP Publishing, 06, (DOI: 10.1088/1742-6596/16/1/083). Cited by: 35
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48. David Wolinsky, Abhishek Agrawal, P. Boykin, Justin Davis, Arijit Ganguly, Vladimir Paramygin, Y. Sheng, Renato Figuerido, (2006), "On the Design of Virtual Machine Sandboxes for Distributed Computing in Wide-area Overlays of Virtual Workstations", VTDC '06 Proceedings Of The 2nd International Workshop On Virtualization Technology In Distributed Computing, Virtualization Technology in Distributed Computing, 2006. VTDC 2006. First International Workshop on, IEEE Computer Society, : pg. pg: 8-, IEEE, 11, ISBN:0-7695-2873-1, (DOI: 10.1109/VTDC.2006.8). Cited by: 35
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49. Sayed Hasan, J. Wang, Mark Lundstrom, (2004), "Device design and manufacturing issues for 10 nm-scale MOSFETs: a computational study", Solid State Electronics, Elsevier, 48, 6: pg. pg: 867-875, 06, (DOI: 10.1016/j.sse.2003.12.022). Cited by: 35
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50. Asha Balijepalli, Saurabh Sinha, Yu Cao, (2007), "Compact Modeling of Carbon Nanotube Transistor for Early Stage Process-Design Exploration", ISLPED '07 Proceedings of the 2007 international symposium on Low power electronics and design, Low Power Electronics and Design \ISLPED), 2007 ACM/IEEE International Symposium on, : pg. pg: 2-7, IEEE, 08, 978-1-59593-709-4, (DOI: 10.1145/1283780.1283783). Cited by: 35
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