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1. Foster, I., (2005), "Service-Oriented Science", Science, 308, 5723: pg. pg: 814-817, 05, (DOI: 10.1126/science.1110411). Cited by: 271
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2. Lundstrom, M.S., Ren, X., (2002), "Essential physics of carrier transport in nanoscale MOSFETs", Electron Devices, IEEE Transactions on, 49, 10: pg. pg: 133--141, 01, (DOI: ). Cited by: 241
BibTex | EndNote| Resources cited: [1], [2]|Electronic paper
3. Rahman, A., Guo, J., Datta, S., Lundstrom, M.S., (2003), "Theory of ballistic nanotransistors", Electron Devices, IEEE Transactions on, 50, 9: pg. pg: 1853--1864, 09, (DOI: ). Cited by: 208
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4. Sumalatha Adabala, Vineet Chadha, Puneet Chawla, Renato Figueiredo, José Fortes, Ivan Krsul, Andrea Matsunaga, Mauricio Tsugawa, Jian Zhang, Ming Zhao, Liping Zhu, Xiaomin Zhu, (2004), "From virtualized resources to virtual computing grids: the In-VIGO system", Future Generation Computer Systems, 21, : pg. pg: 896-909, 02, (DOI: 10.1016/j.future.2003.12.021). Cited by: 200
BibTex | EndNote | | Resources cited: [1]
5. Kim, K., Fossum, J.G., (2001), "Double-Gate CMOS: Symmetrical-Versus Asymmetrical-Gate Devices", Electron Devices, IEEE Transactions on, 48, 2: pg. pg: 294-299, 02, 0018-9383, (DOI: 10.1109/16.902730). Cited by: 130
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6. Ren, Z., Venugopal, R., Goasguen, S., Datta, S., Lundstrom, M.S., (2003), "nanoMOS 2.5: A two-dimensional simulator for quantum transport in double-gate MOSFETs", IEEE Transactions on Electron Devices, 50, 9: pg. pg: 1914--1925, 09, (DOI: ). Cited by: 114
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7. Ruth, P., Rhee, J., Xu, D., Kennell, R., Goasguen, S., (2006), "Autonomic Live Adaptation of Virtual Computational Environments in a Multi-Domain Infrastructure", Autonomic Computing, 2006. ICAC 2006. IEEE International Conference on, : pg. pg: 38485, 06, 1-4244-0175-5, (DOI: ). Cited by: 103
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8. Ruth, P., McGachey, P., Xu, D., (2005), "VioCluster: Virtualization for Dynamic Computational Domains", IEEE International Conference on Cluster Computing, : pg. pg: 38361, 09, 0-7803-9486-0/1552-5244, (DOI: 10.1109/CLUSTR.2005.347064). Cited by: 95
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9. Kumar, S.V., Kim, C.H., Sapatnekar, S.S., (2006), "An Analytical Model for Negative Bias Temperature Instability", 2006 International Conference on Computer-Aided Design, : pg. pg: 493-496, San Jose, CA, 11, 1092-3152, 1-59593-389-1, (DOI: ). Cited by: 84
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10. Raychowdhury, A., Mukhopadhyay, S., Roy, K., (2004), "A circuit-compatible model of ballistic carbon nanotube field-effect transistors", Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on, 23, 10: pg. pg: 1411-1420, 10, (DOI: ). Cited by: 79
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11. Mathieu Luisier, Andreas Schenk, Wolfgang Fichtner, Gerhard Klimeck, (2006), "Atomistic Simulation of Nanowires in the sp3d5s* Tight-Binding Formalism: from Boundary Conditions to Strain Calculations", : pg. 11, (DOI: 10.1103/PhysRevB.74.205323). Cited by: 74
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12. Pop, E., Sinha, S., Goodson, K.E., (2006), "Heat Generation and Transport in nanometer-scale Transistors", Proceedings of the IEEE, 94, 8: pg. pg: 1587-1601, 08, 0018-9219, (DOI: 10.1109/JPROC.2006.879794). Cited by: 66
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13. G.P. Lansbergen, R. Rahman, Cameron J. Wellard, P.E. Rutten, J. Caro, N. Collaert, Serge Biesemans, I. Woo, G. Klimeck, L.C.L. Hollenberg, S. Rogge, (2008), "Gate induced quantum confinement transition of a single dopant atom in a Si FinFET", Nature Physics, 4, : pg. pg: 656, 06, (DOI: 10.1038/nphys994). Cited by: 64
BibTex | EndNote | | Resources cited: [1]
14. Trivedi, V.P., Fossum, J.G., (2005), "Quantum-mechanical effects of the threshold voltage of undoped double-gate MOSFETs", Electron Device Letters, IEEE, 26, 8: pg. pg: 579-582, 08, (DOI: 10.1109/LED.2005.852741). Cited by: 56
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15. Guo, J., Datta, S., Lundstrom, M.S., Brink, M., McEuen, P., Javey, A., Dai, H., Kim, H., McIntyre, P., (2002), "Assessment of Silicon MOS and Carbon Nanotube FET Performance Limits Using a General Theory of Ballistic Transistors", IEEE IEDM, : pg. 12, (DOI: ). Cited by: 55
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16. Chang, L., Yang, K.J., Yeo, Yee-Chia, Polishchuk, I., King, Tsu-Jae, Hu, Chenming, (2002), "Direct-tunneling gate leakage current in double-gate and ultrathin body MOSFETs", IEEE Transactions on Electron Devices, 49, 12: pg. 12, (DOI: ). Cited by: 51
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17. Fossum, J.G., Ge, L., Chiang, M.-H., Trivedi, V.P., Chowdhury, M.M., Matthew, L., Workman, G.O., Nguyen, B.-Y., (2004), "A process/physics-based compact model for nonclassical SMOS device and circuit design", Solid-State Electronics, 48, 6: pg. pg: 919-926, 06, (DOI: 10.1016/J.sse.2003.12.030). Cited by: 50
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18. Rahman, A., Lundstrom, M.S., Ghosh, A.W., (2005), "Generalized effective-mass approach for n-type metal-oxide-semiconductor field-effect transistors on arbitrarily oriented wafers", Journal of Applied Physics, 97, 53702: pg. 02, (DOI: ). Cited by: 48
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19. Antoniadis, D.A., Aberg, Ingvar, Ni Chleirigh, C., Nayfeh, O.M., Khakifirooz, A., Hoyt, Judy L., (2006), "Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations", IBM Journal of Research and Development, 50, 38446: pg. 07, 0018-8646, (DOI: ). Cited by: 48
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20. Gengchiau Liang, Jie Xiang, Neerav Kharche, Gerhard Klimeck, Charles M. Lieber, Mark Lundstrom, (2007), "Performance Analysis of a Ge/Si Core/Shell Nanowire Field-Effect Transistor", American Chemical Society, : pg. 02, (DOI: 10.1021/nl062596f). Cited by: 43
BibTex | EndNote | | Resources cited: [1], [2]
21. Klimeck, G., Ahmed, S.S., Bae, H., Kharche, N., Rahman, R., Clark, S., Haley, B., Lee, S., Naumov, M., Ryu, H., Saied, F., Prada, M., Korkusinski, M., Boykin, T.B., (2007), "Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D - Partt I: Models and benchmarks", Electron Devices, IEEE Transactions on, 54, 9: pg. pg: 2079-2089, 09, 0018-9383, (DOI: 10.1109/TED.2007.902879). Cited by: 42
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22. Ritenour, A., Khakifirooz, A., Antoniadis, D.A., Lei, R.Z., Tsai, W., Dimoulas, A., Mavrou, G., Panayiotatos, Y., (2006), "Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack", Appl. Phys. Lett., 88, 132107: pg. 03, (DOI: ). Cited by: 41
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23. Neophytou, N., Paul, A., Lundstrom, M.S., Klimeck, G., (2008), "Bandstructure Effects in Silicon Nanowire Electron Transport", Electron Devices, IEEE Transactions on, 55, 6: pg. pg: 1286-1297, 06, 0018-9383, (DOI: 10.1109/TED.2008.920233). Cited by: 41
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24. Datta, S., (2004), "Electrical resistance: an atomistic view", IOP Electronic Journals, Nanotechnology, 14, : pg. 07, S433-S451, (DOI: 10.1088/0957-4484/15/7/051). Cited by: 39
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25. Paulsson, M., Datta, S., (2003), "Thermoelectric effect in molecular electronics", Physical Review B, 67, 241403(R): pg. 06, (DOI: ). Cited by: 34
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26. Koswatta, S.O., Hasan, S., Lundstrom, M.S., Anantram, M.P., Nikonov, D.E., (2007), "Non-equilibrium Green's function treatment of phonon scattering in carbon nanotube transistors", IEEE Transactions on Electron Devices, 54, 9: pg. pg: 2339-2351, 08, (DOI: ). Cited by: 34
BibTex | EndNote| Resources cited: [1]|Electronic paper
27. Connelly, D., Yu, Z., Yergeau, D., (2002), "Macroscopic simulation of quantum mechanical effects in 2-D MOSdevices via the density gradient method", Electron Devices, IEEE Transactions on, 49, 4: pg. pg: 619--626, 04, (DOI: ). Cited by: 33
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28. Ren, Z., Venugopal, R., Datta, S., Lundstrom, M.S., (2001), "Examination of design and manufacturing issues in a 10 nm double gate MOSFET using nonequilibrium Green's function simulation", Electron Devices Meeting, 2001. IEDM Technical Digest. International, : pg. pg: 541--544, 12, (DOI: ). Cited by: 33
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29. Chang, L., Yang, K.J., Yeo, Yee-Chia, Choi, Yang-Kyu, King, Tsu-Jae, Hu, Chenming, (2001), "Reduction of direct-tunneling gate leakage current in double-gate and ultra-thin body MOSFETs", International Electron Devices Meeting, 2001. IEDM Technical Digest, : pg. 12, (DOI: ). Cited by: 31
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30. Zahid, F., Paulsson, M., Polizzi, E., Ghosh, A.W., Siddiqui, L., Datta, S., (2005), "A self-consistent transport model for molecular conduction based on extended Hückel theory with full three-dimensional electrostatics", Journal of Chemical Physics, 123, 6: pg. 08, (DOI: 10.1063/1.1961289). Cited by: 30
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31. Luisier, M., Schenk, A., Fichtner, W., (2006), "Quantum transport in two- and three-dimensional nanoscale transistors: Coupled mode effects in the nonequilibrium Green's function formalism", Journal of Applied Physics, 100, 43713: pg. 08, (DOI: 10.1063/1.2244522). Cited by: 30
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32. Fortes, J.A.B., Figueiredo, R.J., Lundstrom, M.S., (2005), "Virtual computing infrastructures for nanoelectronics simulation", Proceedings of the IEEE, 93, 10: pg. pg: 1839--1847, 10, (DOI: ). Cited by: 30
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33. Wang, J., Polizzi, E., Lundstrom, M.S., (2003), "A computational study of ballistic silicon nanowire transistors", Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International, : pg. pg: 29.5.1-29.5.4, 12, 0-7803-7872-5, (DOI: 10.1109/IEDM.2003.1269375). Cited by: 29
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34. David Isaac Wolinsky, Abhishek Agrawal, P. Oscar Boykin, Justin R. Davis, Arijit Ganguly, Vladimir Paramygin, Y. Peter Sheng, Renato J. Figueiredo, (2006), "On the Design of Virtual Machine Sandboxes for Distributed Computing in Wide-area Overlays of Virtual Workstations", Proceedings of the 2nd International Workshop on Virtualization Technology in Distributed Computing, IEEE Computer Society, : pg. pg: 8, 11, ISBN:0-7695-2873-1, (DOI: ). Cited by: 29
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35. Thomas, M.P., Burruss, J., Cinquini, L., Fox, G.C., Gannon, D.B., Gilbert, L., von Laszewski, G., Jackson, K., Middleton, D., Moore, R., Pierce, M., Plale, B., Rajasekar, A., Regno, R., Roberts, E., Schissel, D., Seth, A., Schroeder, W., (2005), "Grid portal architectures for scientific applications", Journal of Physics: Conference Series, 16, : pg. 06, (DOI: 10.1088/1742-6596/16/1/083). Cited by: 28
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36. Gianluca Fiori, Giuseppe Iannaccone, Gerhard Klimeck, (2008), "A Three-dimensional simulation study of the performance of Carbon Nantube Field Effect Transistors with doped reservoirs and realisitic geometry", IEEE TRANSACTIONS ON ELECTRON DEVICES, : pg. 02, (DOI: 10.1109/TED.2006.878018). Cited by: 28
BibTex | EndNote | | Resources cited: [1], [2]
37. Gianluca Fiori, Guiseppe Iannaccone, Gerhard Klimeck, (2005), "Performance of Carbon Nanotube Field Effect Transistors with doped source and drain extensions and arbitrary geometry", 2005 IEEE International Electron Devices Meeting, : pg. Washington, DC, 12, (DOI: ). Cited by: 28
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38.
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Zahid, F., Paulsson, M., Datta, S., (2003), "Electrical Conduction through Molecules", Advanced Semiconductors and Organic Nano-Techniques, Academic Press, : pg. 07, (DOI: ). Cited by: 27
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39. Rahman, A., Ghosh, A.W., Lundstrom, M.S., (2003), "Assessment of Ge n-MOSFETs by quantum simulation", Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International, : pg. pg: 1941--1944, 12, (DOI: ). Cited by: 27
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40. Sayed Hasan, Jing Wang, Mark Lundstrom, (2004), "Device design and manufacturig issues for 10 nm-scale MOSFETs: a computational study", 48, 6: pg. pg: 867-875, 06, (DOI: 10.1016/j.sse.2003.12.022). Cited by: 27
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41. Wang, J., Rahman, A., Ghosh, A.W., Klimeck, G., Lundstrom, M.S., (2005), "Performance evaluation of ballistic silicon nanowire transistors with atomic-basis dispersion relations", Applied Physics Letters, 86, 93113: pg. 02, (DOI: 10.1063/1.873055). Cited by: 26
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42. Low, T., Hou, Y.T., Li, M.F., Zhu, Chunxiang, Chin, A., Samudra, G., Chan, L., Kwong, D.-L., (2003), "Investigation of Performance Limits of Germanium Double-Gated MOSFETs", IEEE International Electron Devices Meeting, 2003. IEDM '03 Technical Digest, : pg. 12, 0-7803-7872-5, (DOI: 10.1109/IEDM.2003.1269374). Cited by: 26
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43.
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Wang, J., Lundstrom, M.S., (2005), "Device Physics and Simulation of Silicon Nanowire Transistors", : pg. Purdue University, 08, (DOI: ). Cited by: 26
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44.
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Paulsson, M., Zahid, F., Datta, S., (2002), "Resistance of a Molecule", Handbook of Nanoscience, Engineering and Technology, : pg. 10, (DOI: ). Cited by: 25
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45. Rahman, A., Klimeck, G., Lundstrom, M.S., (2005), "Novel channel materials for ballistic nanoscale MOSFETs-bandstructure effects", Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International, : pg. pg: 4, 12, (DOI: ). Cited by: 25
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46. Eminente, S., Cristoloveanu, S., Clerc, R., Ohata, A., Ghibaudo, G., (2007), "Ultra-thin fully-depleted SOI MOSFETs: Special charge properties and coupling effects", Solid-State Electronics, 51, 2: pg. pg: 239-244, 02, (DOI: 10.1016/j.sse.2007.01.016). Cited by: 24
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47. Hess, H., (2006), "Toward Devices Powered by Biomolecular Motors", Science, 312, 5775: pg. pg: 860-861, 02, (DOI: 10.1126/science.1126399). Cited by: 23
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48. Xia, T., Register, L.F., Banerjee, S.K., (2003), "Quantum transport in double-gate MOSFETs with complex band structure", Electron Devices, IEEE Transactions on, 50, 6: pg. pg: 1511-1516, 06, 1557-9646, (DOI: 10.1109/TED.2003.813348). Cited by: 21
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49.
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Javier Fernández, Antonio Cañas, Antonio F. Díaz, Jesús González, Julio Ortega, Alberto Prieto, (2002), "Performance of Message-Passing MATLAB Toolboxes", High Performance Computing for Computational Science--VECPAR 2002, : pg. pg: 228-242, 06, (DOI: 10.1007/3-540-36569-9). Cited by: 18
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50. Heitzinger, C., Klimeck, G., (2007), "Computational aspects of the three-dimensional feature-scale simulation of silicon-nanowire field-effect sensors for DNA detection", Journal of Computational Electronics, 6, 38354: pg. pg: 387-390, 01, 1569-8025, (DOI: 10.1007/s10825-006-0139-x). Cited by: 17
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