%0 Proceedings
%B International Conference on Computer and Electrical Engineering, 2008. ICCEE 2008.
%J International Conference On Computer And Electrical Engineering, 2008. ICCEE 2008.
%D 2009
%T Modeling of Ballistic Carbon Nanotube Transistors by Neural Space Mapping
%A Saghafi, K
%A Yousefi, Reza
%P 165-168
%U http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4740968
%Z We modified conventional MOSFET equations and used NSM concept in order to correct these equations in the manner that to be usable to carbon nanotube transistors. We used Fettoy model \which is applicable to MOSCNT structures) to compare accuracy. We have shown that our model has reasonable accuracy at different biases and physical parameters. Fettoy [5, 6] are numerical, involving self-consistent equations which circuit solvers like SPICE are not able to handle. Many works have been done in order to remove self-consistent loop. some of them introduced an analytical equation in order to remove charge integral for increasing simulation speed [7] and some others introduced an analytical equation to direct 6] Fettoy matlab code: www.nanohub.org
%8 01
%@ 978-0-7695-3504-3
%1 10.1109/ICCEE.2008.123