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Gate Direct Tunneling Current in Uniaxially Compressive Strained nMOSFETs: A Sensitive Measure of Electron Piezo Effective Mass Edit

By: Wei-Han Lee, Ming-Jer Chen
Wei-Han Lee, Ming-Jer Chen, (2011), "Gate Direct Tunneling Current in Uniaxially Compressive Strained nMOSFETs: A Sensitive Measure of Electron Piezo Effective Mass", IEEE Transactions on Electron Devices, IEEE, 58, 1: pg: 39-45, 11, (DOI: 10.1109/TED.2010.2084578). Cited by:

About

Type Journal
Journal IEEE Transactions on Electron Devices
Publisher IEEE
Ref Type R
Date Submitted May 26, 2010
Date Accepted September 25, 2010
Date Published January 01, 2011
Year 2011
Month 11
Volume 58
Issue 1
Pages 39-45
DOI 10.1109/TED.2010.2084578
Notes {{IEEE}}
Submitted By Swaroop S
Submitted Thursday, February 03, 2011 @ 12:00am

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