Gate Direct Tunneling Current in Uniaxially Compressive Strained nMOSFETs: A Sensitive Measure of Electron Piezo Effective Mass

By: Wei-Han Lee, Ming-Jer Chen
Wei-Han Lee, Ming-Jer Chen, (2011), "Gate Direct Tunneling Current in Uniaxially Compressive Strained nMOSFETs: A Sensitive Measure of Electron Piezo Effective Mass", IEEE Transactions on Electron Devices, IEEE, 58, 1: pg: 39-45, 11, (DOI: 10.1109/TED.2010.2084578). Cited by:

About

Type Journal
Journal IEEE Transactions on Electron Devices
Publisher IEEE
Ref Type R
Date submitted May 26, 2010
Date accepted September 25, 2010
Date published January 01, 2011
Year 2011
Month 11
Volume 58
Issue/Number 1
Pages 39-45
DOI 10.1109/TED.2010.2084578
Text snippet/Notes {{IEEE}}
Submitted By Swaroop S
Submitted Thursday, February 03, 2011 @ 12:00am