Support

Support Options

Submit a Support Ticket

 

Interface Trap Density Metrology of State-of-the-Art Undoped Si n-FinFETs Edit

By: Giuseppe Tettamanzi, Abhijeet Paul, Sunhee Lee, Saumitra Mehrotra, S. Biesemans, G Klimeck, Sven Rogge, N. Collaert
Giuseppe Tettamanzi, Abhijeet Paul, Sunhee Lee, Saumitra Mehrotra, S. Biesemans, G Klimeck, Sven Rogge, N. Collaert, (2011), "Interface Trap Density Metrology of State-of-the-Art Undoped Si n-FinFETs", Electron Device Letters, IEEE, 32, 4: pg: 440-442, 11, (DOI: 10.1109/LED.2011.2106150 ). Cited by:

About

Type Journal
Journal Electron Device Letters
Publisher IEEE
Ref Type R
Date submitted December 24, 2010
Date accepted January 04, 2011
Date published March 23, 2011
Year 2011
Month 11
Volume 32
Issue/Number 4
Pages 440-442
DOI 10.1109/LED.2011.2106150
Text snippet/Notes {{IEEE}}

computational resources provided
Submitted By Swaroop S
Submitted Thursday, February 03, 2011 @ 12:00am

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.