Interface Trap Density Metrology of State-of-the-Art Undoped Si n-FinFETs

By: Giuseppe Tettamanzi, Abhijeet Paul, Sunhee Lee, Saumitra Mehrotra, S. Biesemans, G Klimeck, Sven Rogge, N. Collaert
Giuseppe Tettamanzi, Abhijeet Paul, Sunhee Lee, Saumitra Mehrotra, S. Biesemans, G Klimeck, Sven Rogge, N. Collaert, (2011), "Interface Trap Density Metrology of State-of-the-Art Undoped Si n-FinFETs", Electron Device Letters, IEEE, 32, 4: pg: 440-442, 11, (DOI: 10.1109/LED.2011.2106150 ). Cited by:

About

Type Journal
Journal Electron Device Letters
Publisher IEEE
Ref Type R
Date submitted December 24, 2010
Date accepted January 04, 2011
Date published March 23, 2011
Year 2011
Month 11
Volume 32
Issue/Number 4
Pages 440-442
DOI 10.1109/LED.2011.2106150
Text snippet/Notes {{IEEE}}

computational resources provided
Submitted By Swaroop S
Submitted Thursday, February 03, 2011 @ 12:00am