Special Features of the Back-Gate Effects in Ultra-Thin Body SOI MOSFETs

By: Tamara Rudenko, Valeriya Kilchytska, J.-P. Raskin, A. Nazarov, Denis Flandre
Tamara Rudenko, Valeriya Kilchytska, J.-P. Raskin, A. Nazarov, Denis Flandre, (2011), "Special Features of the Back-Gate Effects in Ultra-Thin Body SOI MOSFETs", Semiconductor-on-insulator Materials For Nanoelectronics Applications, Semiconductor-On-Insulator Materials for Nanoelectronics Applications, Springer: pg: 323-339, 978-3-642-15867-4, (DOI: 10.1007/978-3-642-15868-1). Cited by:

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Type In Book
Journal Semiconductor-on-insulator Materials For Nanoelectronics Applications
Publisher Springer
Book title Semiconductor-On-Insulator Materials for Nanoelectronics Applications
Ref Type R
Date published March 03, 2011
Year 2011
Month 00
Pages 323-339
ISBN/ISSN 978-3-642-15867-4
DOI 10.1007/978-3-642-15868-1
Text snippet/Notes {{Springer}}
Submitted By Swaroop S
Submitted Friday, May 20, 2011 @ 12:00am