Temperature-Dependent Remote-Coulomb-Limited Electron Mobility in n+-Polysilicon Ultrathin Gate Oxide nMOSFETs

By: Ming-Jer Chen, Sou-Chi Chang, Shin-Jiun Kuang, Chien-Chih Lee, Wei-Han Lee, Kuan-Hao Cheng, Yi-Hsien Zhan
Ming-Jer Chen, Sou-Chi Chang, Shin-Jiun Kuang, Chien-Chih Lee, Wei-Han Lee, Kuan-Hao Cheng, Yi-Hsien Zhan, (2011), "Temperature-Dependent Remote-Coulomb-Limited Electron Mobility in n+-Polysilicon Ultrathin Gate Oxide nMOSFETs", IEEE Transactions on Electron Devices, 58, 4: pg: 1038-1044, 02, 0018-9383, (DOI: 10.1109/TED.2011.2107519). Cited by:

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Type Journal
Journal IEEE Transactions on Electron Devices
Ref Type R
Date submitted October 21, 2010
Date accepted January 12, 2011
Date published February 14, 2011
Year 2011
Month 02
Volume 58
Issue/Number 4
Pages 1038-1044
ISBN/ISSN 0018-9383
DOI 10.1109/TED.2011.2107519
Text snippet/Notes {{IEEE}}
Submitted By Swaroop S
Submitted Friday, May 20, 2011 @ 12:00am