Subband Engineering for p-Type Silicon Ultra-Thin Layers for Increased Carrier Velocities: An Atomistic Analysis

By: N. Neophytou, G Klimeck, H. Kosina
N. Neophytou, G Klimeck, H. Kosina, (2011), "Subband Engineering for p-Type Silicon Ultra-Thin Layers for Increased Carrier Velocities: An Atomistic Analysis", Journal of Applied Physics, AIP, 109, 5: pg: - 03, 0021-8979, (DOI: 10.1063/1.3556435). Cited by:

About

Type Journal
Journal Journal of Applied Physics
Publisher AIP
Ref Type R
Date submitted July 23, 2010
Date accepted January 18, 2011
Date published March 15, 2011
Year 2011
Month 03
Volume 109
Issue/Number 5
Pages -
ISBN/ISSN 0021-8979
DOI 10.1063/1.3556435
Text snippet/Notes {{AIP}}
Submitted By Swaroop S
Submitted Friday, May 20, 2011 @ 12:00am