Hole Effective Masses as a Booster of Self-Consistent Six-Band k*p Simulation in Inversion Layers of pMOSFETs

By: Ming-Jer Chen, Chien-Chih Lee, Kuan-Hao Cheng
Ming-Jer Chen, Chien-Chih Lee, Kuan-Hao Cheng, (2011), "Hole Effective Masses as a Booster of Self-Consistent Six-Band k*p Simulation in Inversion Layers of pMOSFETs", IEEE Transactions on Electron Devices, 58, 4: pg: 931-937, 02, 0018-9383, (DOI: 10.1109/TED.2011.2105271). Cited by:

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Type Journal
Journal IEEE Transactions on Electron Devices
Ref Type R
Date submitted September 29, 2010
Date accepted December 20, 2010
Date published February 10, 2011
Year 2011
Month 02
Volume 58
Issue/Number 4
Pages 931-937
ISBN/ISSN 0018-9383
DOI 10.1109/TED.2011.2105271
Text snippet/Notes {{IEEE}}
Submitted By Swaroop S
Submitted Friday, May 20, 2011 @ 12:00am