Support

Support Options

Submit a Support Ticket

 

Hole Effective Masses as a Booster of Self-Consistent Six-Band k*p Simulation in Inversion Layers of pMOSFETs Edit

By: Ming-Jer Chen, Chien-Chih Lee, Kuan-Hao Cheng
Ming-Jer Chen, Chien-Chih Lee, Kuan-Hao Cheng, (2011), "Hole Effective Masses as a Booster of Self-Consistent Six-Band k*p Simulation in Inversion Layers of pMOSFETs", IEEE Transactions on Electron Devices, 58, 4: pg: 931-937, 02, 0018-9383, (DOI: 10.1109/TED.2011.2105271). Cited by:

Find this Text

Below you can find links that may assist you in locating a copy of this item:

DOI Resolver http://dx.doi.org/10.1109/TED.2011.2105271
Local Library

If you are a member of this institution, you may be able to access this item through them either in print or perhaps online. If this is a public library or land-grant university, you may be able to at least access this item when you visit the library.

If your local public or college library does not have this item in its collection, you may be able to request a copy through a service called "Interlibrary Loan." Why not give them a call to see if they can help you?

Google Scholar Google Scholar Search Results
Other Sources

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.