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Simulating Realistic Implementations of Spin Field Effect Transistor

Yunfei Gao, Dmitri Nikonov, Mark Lundstrom, (2011), "Simulating Realistic Implementations of Spin Field Effect Transistor", Journal of Applied Physics, American Institute of Physics, 109, 7: pg: -, 03, 0021-8979, (DOI: 10.1063/1.3536460). Cited by:


Type Journal
Journal Journal of Applied Physics
Publisher American Institute of Physics
Ref Type R
Date submitted September 22, 2010
Date accepted October 22, 2010
Date published March 22, 2011
Year 2011
Month 03
Volume 109
Issue/Number 7
Pages -
ISBN/ISSN 0021-8979
DOI 10.1063/1.3536460
Text snippet/Notes {{AIP}}
Submitted By Swaroop S
Submitted Friday, May 20, 2011 @ 12:00am, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.