Effects of Quantum Confinement on Electrical Characteristics of 12-nm Silicon-on-Insulator Fin Field-Effect Transistors by Quantum Transport Analysis

By: Keng-Ming Liu
Keng-Ming Liu, (2011), "Effects of Quantum Confinement on Electrical Characteristics of 12-nm Silicon-on-Insulator Fin Field-Effect Transistors by Quantum Transport Analysis", Japanese Journal Of Applied Physics, IOP Publishing, 50, 4: pg: -, (DOI: 10.1143/JJAP.50.04DC19). Cited by:

About

Type Journal
Journal Japanese Journal Of Applied Physics
Publisher IOP Publishing
Ref Type R
Date submitted September 14, 2010
Date accepted November 10, 2010
Date published April 20, 2011
Year 2011
Month 00
Volume 50
Issue/Number 4
Pages -
DOI 10.1143/JJAP.50.04DC19
Text snippet/Notes {{JSAP}}
Submitted By Swaroop S
Submitted Monday, June 13, 2011 @ 12:00am