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In the last 50 years, solid state devices like transistors have evolved from an interesting laboratory experiment to a technology with applications in all aspects of modern life. Making transistors is a complex process that requires unprecedented collaboration among material scientists, solid state physicists, chemists, numerical analysts, and software professionals. And yet, as you will see in part 1 of this course (first 5 weeks), that the basics of current flow though solid state …

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Luke Allen Yates onto semiconductor devices

Raman spectroscopy processing for Graphene growth characterization

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Guoxiong Cai onto Graphene-Growth

Optimizes the growth of graphene in a plasma chemical vapor deposition (CVD) system.

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Guoxiong Cai onto Graphene-Growth

Basic Concepts presents key concepts in nanoelectronics and mesoscopic physics and relates them to the traditional view of electron flow in solids.

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Shivam Singh onto nanoelectronics

The goals of this course are to give the student an understanding of the elements of semiconductor physics and principles of semiconductor devices that (a) constitute the foundation required for an electrical engineering major to take follow-on courses, and (b) represent the essential basic knowledge of the operation and limitations of the three primary electronic devices, 1) p-n junctions, 2) bipolar transistors, and 3) field effect transistors, that either an electrical engineer or a computer engineer will find useful in maintaining currency with new developments in semiconductor devices and integrated circuits in an extended career in either field.

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Shivam Singh onto solid state

Introduction to quantum mechanics and solid state physics. Specific topics include free electron behavior, potential energy wells and barriers, energy band theory, phonons, and electrical properties of metals and semiconductors. This course develops many concepts of fundamental interest to nanoscale science and engineering such as quantum confinement and reduced dimensionality effects in nanomaterials.

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Shivam Singh onto quantum

Scaling of CMOS devices into the nanometer regime leads to increased processing cost. In this regard, the field of Computational Electronics is becoming more and more important because device simulation offers unique possibility to test hypothetical devices which have not been fabricated yet and it also gives unique insight into the device behavior by allowing the observation of phenomena that can not be measured on real devices. The objective of this class is to introduce the students to all semi-classical semiconductor device modeling techniques that are implemented in either commercial or publicly available software. As such, it should help students to understand when one can use drift-diffusion model and when it is necessary to use hydrodynamic, lattice heating, and even particle-based simulations. A short tutorial on using the Silvaco/PADRE simulation software is included and its purpose is to make users familiar with the syntax used in almost all commercial device simulation software.

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CM Kaushik onto MyCollection

What Is Computational Electronics and Why Do We Need It?

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CM Kaushik onto MyCollection

Solid-State Theory and Semiconductor Transport Fundamentals

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CM Kaushik onto MyCollection

Solid-State Theory and Semiconductor Transport Fundamentals

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CM Kaushik onto MyCollection

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CM Kaushik onto MyCollection

Introduction of Quantum-Mechanical Effects in Device Simulation

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CM Kaushik onto MyCollection

Silvaco/PADRE Description and Application to Device Simulation

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CM Kaushik onto MyCollection

Drift-Diffusion Model

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CM Kaushik onto MyCollection

Drift-Diffusion Model

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CM Kaushik onto MyCollection

We describe the development of the modeling efforts focused towards proper description of the threshold voltage fluctuations due to the discrete impurity effects (different number and different distribution of the impurities from device to device on the same chip).NSF, ONRW. J. Gross, D. Vasileska and D. K. Ferry, “A Novel Approach for Introducing the Electron-Electron and Electron-Impurity Interactions in Particle-Based Simulations,” IEEE Electron Device Lett. 20, No. 9, pp.463-465 …

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CM Kaushik onto MyCollection

An Assembly of TCAD tools for circuit, device, and process simulation

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CM Kaushik onto MyCollection

This collection of problems should help the students to better understand Semiconductor Device Physics on a fundamental and more complex level.

Crystal lattices and Miller indicies From 1 well to 2 wells to 5 wells to periodic potentials Periodic potentials and bandstructure Bandstructure exercise Simplified bandstructure model Can we define unique effective masses in Si nanowires? Density of states function calculation Dopants and semiconductor statistics General tool construction …

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CM Kaushik onto MyCollection

When we hear the term semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in our daily lives. Electronic systems are built from such components as transistors, capacitors, wires, …

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CM Kaushik onto MyCollection

Lecture notes for the Fall 2009 teaching of ECE 495: Fundamentals of Nanoelectronics.

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Terrence Warren McGinnis onto my collections

fundamentals of semiconductors

 

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Terrence Warren McGinnis onto my collections

Oxidation Worksheet

oxidation of silicon

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Terrence Warren McGinnis onto my collections

Carbon Nanotube Worksheet

This worksheet has students describe the geometries and conductivity type of several different carbon nanotubes of differing chirality.  CNT Bands can be used to simulate the structures and check the results.

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Terrence Warren McGinnis onto my collections

Scaling of CMOS devices into the nanometer regime leads to increased processing cost. In this regard, the field of Computational Electronics is becoming more and more important because device simulation offers unique possibility to test hypothetical devices which have not been fabricated yet and it also gives unique insight into the device behavior by allowing the observation of phenomena that can not be measured on real devices. The objective of this class is to introduce the students to all semi-classical semiconductor device modeling techniques that are implemented in either commercial or publicly available software. As such, it should help students to understand when one can use drift-diffusion model and when it is necessary to use hydrodynamic, lattice heating, and even particle-based simulations. A short tutorial on using the Silvaco/PADRE simulation software is included and its purpose is to make users familiar with the syntax used in almost all commercial device simulation software.

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Profile picture of Terrence Warren McGinnis

Terrence Warren McGinnis onto my collections