The Effect of Doping on Semiconductors
In this simulation, users can select the temperature and the concentration of dopant, both donors and acceptors, that can be added to silicon. Two diagrams are generated. One is a schematic of an energy band diagram that shows the Fermi energy as well as a representation of the concentrations of electrons and holes in the material using red and blue circles. The other shows the concentrations of electrons and holes as a function of temperature as a line plot, in a classic Arrhenius plot representation. The intrinsic carrier concentration and Fermi energy are also shown, for reference.