Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collision-dominated transport equations used in current device simulators can no longer be applied. On the other hand, the use of a better, more accurate Boltzmann Transport Equation (BTE) is hampered by the fact that it is a complicated integro-differential 6-dimensional kinetic equation and is extremely difficult to solve. Previous works on solving the BTE have used either …