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Quantum Band Engineering in III-nitride Semiconductors
In this talk I will focus on our efforts to creatively exploit the unique properties of nano-structured III-nitride materials for novel light emitters and detectors in the currently under-developed near- and far-infrared ranges. Due to large electron effective mass, the nitride intersubband materials require the ability to fine-tune the atomic structure at an unprecedented sub-nanometer level. I will describe our work to understand, model, and control the fundamental underpinnings of light generation and electrical transport in nitride nanostructures.
Rong Huang onto Band Engineering
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