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Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of understanding MOSFETs that is much more suitable than traditional approaches when the channel lengths are of nanoscale dimensions. lecture 1 reviews traditional MOSFET theory, and Lecture 2 presents the new approach in its simplest form. Lectures 3A and 3B describe the mathematical treatment of ballistic …

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Guangyu Li onto EE

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    Daniel Morgan

    We can build an alternative compact model for MOSFETs where a debasement of the mobilitycaused by high longitudinalfields is available. It must be observed that it isn't adequate to Essay Writing Service present such a diminishing highfield versatility in the reduced model.

EE

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Guangyu Li

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