In this simulation, users can select the temperature and the concentration of dopant, both donors and acceptors, that can be added to silicon. Two diagrams are generated. One is a schematic of an energy band diagram that shows the Fermi energy as well as a representation of the concentrations of electrons and holes in the material using red and blue circles. The other shows the concentrations of electrons and holes as a function of temperature as a line plot, in a classic Arrhenius plot representation. The intrinsic carrier concentration and Fermi energy are also shown, for reference.