Fall 2008

This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development of new integrated circuit technologies. The course consists of three parts. Part 1 treats silicon MOS and MOSFET fundamentals as well as second order effects such as gate leakage and quantum mechanical effects. Short channel effects, device scaling, and fabrication processes and reliability are the subject of Part 2. In Part …

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Henry Clay Alexander onto Nano Electronics

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    Shivam Singh

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    Ritul Jha

    Your post is too good. this was really an interesting format and i really impress to spend my free time to play free checkers games in without following any account registration.

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