Compute the eigenstates of a particle in a box of various shapes including domes and pyramids.

Tools for Atomic Scale Modeling

In the last 50 years, solid state devices like transistors have evolved from an interesting laboratory experiment to a technology with applications in all aspects of modern life. Making transistors is a complex process that requires unprecedented collaboration among material scientists, solid state physicists, chemists, numerical analysts, and software professionals. And yet, as you will see in part 1 of this course (first 5 weeks), that the basics of current flow though solid state …

The goals of this course are to give the student an understanding of the elements of semiconductor physics and principles of semiconductor devices that (a) constitute the foundation required for an electrical engineering major to take follow-on courses, and (b) represent the essential basic knowledge of the operation and limitations of the three primary electronic devices, 1) p-n junctions, 2) bipolar transistors, and 3) field effect transistors, that either an electrical engineer or a computer engineer will find useful in maintaining currency with new developments in semiconductor devices and integrated circuits in an extended career in either field.

Contact mechanics

Select tutorials in nanotechnology, a part of the 2010 NCN@Purdue Summer School: Electronics from the Bottom Up.

Calculate the Fermi-Dirac integral given the fermi energy and the order of integral

Simulate molecular dynamics using LAMMPS as well as an addition electrochemical force field (EChemDID)

Semi-empirical Molecular Orbital calculations.

Calculate core level x-ray absorption spectra for molecules and crystals

Online IMOD tool for electron tomography

Simulate realistic 1, 2, or 3-dimension nano-optical systems using the FDTD method.

Simulate fields of dimers using a nonlocal model

Calculates the effective diffusivity in a grain boundary network with two types of randomly distributed grain boundaries.

Calculate the carrier concentration for a semiconductor material as a function of doping and temperature.

Calculate the resonance energies and lifetimes of a user-defined potential with a uniform complex-scaling transformation.

Calculate and observe the relationship between current, voltage, resistance, and power.

Simulate dislocation movement, crack propagation, nanowire tensile tests, and simple phase transitions

Simulate crack propagations through materials under applied loads.

Generates 3D surface contour plot of the Young’s modulus from a compliance matrix (Sij).

Helps the user to determine the thickness of an overlayer material from XPS experiment data.

Understand how to calculate the equivalent impedance of circuit elements combined in parallel and/or series, and understand equivalent impedance calculations in rectangular and polar form.

SIS materials

Fluorescence Imaging

Fall 2008

This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development of new integrated circuit technologies. The course consists of three parts. Part 1 treats silicon MOS and MOSFET fundamentals as well as second order effects such as gate leakage and quantum mechanical effects. Short channel effects, device scaling, and fabrication processes and reliability are the subject of Part 2. In Part …