ECE 606: Solid State Devices - Professors Muhammad A. Alam and Mark Lundstrom
This course was developed by Professor Mark Lundstrom using Professor Muhammad Alam’s lectures. It focuses on basic semiconductor physics and the physics of three important devices: 1) the PN junction, 2) the bipolar junction transistor (BJT), and 3) the metal-oxide-semiconductor field-effect transistor (MOSFET).
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About the Instructors
Mark Lundstrom is the Don and Carol Scifres Distinguished Professor of Electrical and Computer Engineering at Purdue University. He was the founding director of the Network for Computational Nanotechnology and now serves as chairman of its Executive Committee. Lundstrom earned his bachelor’s and master’s degrees from the University of Minnesota in 1973 and 1974, respectively and joined the Purdue faculty upon completing his doctorate on the West Lafayette campus in 1980. Before attending Purdue, he worked at Hewlett-Packard Corporation on MOS process development and manufacturing. At Purdue, he has worked on solar cells, heterostructure devices, carrier transport physics, and the physics and simulation of nanoscale transistors. His current research interests focus on the physics and technology of energy conversion devices. Lundstrom is a fellow the Institute of Electrical and Electronic Engineers (IEEE), the American Physical Society (APS), and the American Association for the Advancement of Science (AAAS). He has received several awards for his contributions to research and education and is a member of the U.S. National Academy of Engineering.
Spring 2013: EE 115, TTH 4:30-5:45PM
Instructor: M. S. Lundstrom (lundstro at purdue.edu)
Office Hours: MWF 9:30-10:30AM, EE-334C
(or make an appointment for a different time by e-mail)
This course was offered at Purdue in Spring 2013. Those who find the materials here useful, are welcome to make use of them.
This course is about basic semiconductor physics and the physics of three important devices: 1) the PN junction, 2) the bipolar junction transistor (BJT), and 3) the metal-oxide-semiconductor field-effect transistor (MOSFET). The course is divided into three parts. The first part is an introduction to quantum mechanics and solid-state physics (energy bands, electrons and holes, the Fermi function), doping and carrier densities, carrier transport and generation-recombination, and the so-called semiconductor equations, which provide a complete, semi-classical, mathematical description of electrons and holes in semiconductors, subject to some important simplifying assumptions. The second part of the course applies these concepts to PN junctions and bipolar junction transistors (BJTs), and the third part treats the dominant electronic device today, the metal-oxide-semiconductor field-effect transistor (MOSFET).
The course covers a lot of ground, but it provides a basic understanding of semiconductors and devices, for those interested in circuits and applications, and a starting point for further studies, for those who intend to focus on electronic materials and devices.
For a useful collection of practice exams, see Prof. Robert Pierret’s: Semiconductor Device Fundamentals Textbook
- Week 1: Introduction / Geometry of Crystals
- Week 2: Quantum Mechanics / Schrodinger Equation (ASF 22-45)
- Week 3: Energy Bands / Energy Bands in 3D Crystals
- Week 4: Density of States / Fermi-Dirac Statistics
- Week 5: Doping / Equilibrium Statistics / Carrier Conc.
- Week 6: Recombination-Generation, Bulk and Surface
- Week 7: Carrier Transport / Semiconductor Equations
- Week 8: PN and MS Diode Electrostatics / I-V Characteristics
- Week 9: PN Junctions – non-ideal / AC Resp. / Trans
- Week 10: Bipolar Transistors
- Week 11: References and Supplementary Information
- Week 12: MOS Electrostatics
- Week 13: MOSFETS: Ideal
- Week 14: MOSFETS: Nonideal
- Week 15: Course Wrap-up
- Finals Week
The Final Exam is not comprehensive – Exam 6 is much like Exams 1-5.
- Exam 6