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ECE 656: Electronic Transport in Semiconductors

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Purdue University

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Offering: 01a
Section: Default

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About the Instructor

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Mark Lundstrom

Purdue University

Mark Lundstrom is the Don and Carol Scifres Distinguished Professor of Electrical and Computer Engineering at Purdue University. He was the founding director of the Network for Computational Nanotechnology and now serves as chairman of its Executive Committee. Lundstrom earned his bachelor’s and master’s degrees from the University of Minnesota in 1973 and 1974, respectively and joined the Purdue faculty upon completing his doctorate on the West Lafayette campus in 1980. Before attending Purdue, he worked at Hewlett-Packard Corporation on MOS process development and manufacturing. At Purdue, he has worked on solar cells, heterostructure devices, carrier transport physics, and the physics and simulation of nanoscale transistors. His current research interests focus on the physics and technology of energy conversion devices. Lundstrom is a fellow the Institute of Electrical and Electronic Engineers (IEEE), the American Physical Society (APS), and the American Association for the Advancement of Science (AAAS). He has received several awards for his contributions to research and education and is a member of the U.S. National Academy of Engineering.

This course is about how charge flows in semiconductors with an emphasis on transport in nanoscale devices. The objective is to develop a broad understanding of basic concepts. The course is designed for those who work on electronic materials and devices – whether they are experimentalists, device physicists, or computational experts. The course is intended to be accessible to students with a general, introductory background in semiconductors. The course consists of three parts. Part 1 reviews advanced semiconductor fundamentals reviewing concepts covered in 453/595 and 606 and addressing new topics such as carrier scattering. Part 2 addresses near-equilibrium transport in the presence of small gradients in the electrochemical potential or temperature, with or without the application of a small magnetic field. Finally, Part 3 examines high-field transport in bulk semiconductors and so-called “non-local” transport in nanoscale devices. Both semiclassical and quantum transport effects are discussed.

The following is an outline of the course and you should be able to find a more in-depth listing when you "Enroll in Course" on the right.

  • Week 1: Introduction

  • Week 2: DOS and intro to scattering

  • Week 3: Ionized impurity scattering

  • Week 4: Phonon scattering

  • Week 5: Scattering wrap up

  • Week 6: Intro to Landauer Approach

  • Week 7: Near-equilibrium electronic transport

  • Week 8: Near-equilibrium thermoelectric transport

  • Week 9: Transmission and Phonon Transport

  • Week 10: Boltzmann Transport Equation (BTE)

  • Week 11: The BTE II

  • Week 12: Measurements and Characterization

  • Week 13: Balance Equation Approach

  • Week 14: Monte Carlo and Quantum Transport

  • Week 15: High Field and Non-local Transport

  • Week 16: Ballistic Transport in Devices, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.