1. Does Einstein relationship hold for activated diffusion?
2. People argue that the forward dissociation and reverse passivation have similar activation barriers. Would you support the argument?
3. What assumption did I make regarding diffusion of H in SiO2 that makes the derivation slightly imprecise? Hint. Crystal vs. amorphous structure.
4. Can you explain physically why tunneling is less temperature sensitive than SiH bond dissociation?
5. Would the “observed activation energy” decrease or increase if there are significant hole trapping?
6. Where does the entropy hide in classical rate equations? How do we account for it when we discuss semiconductor physics?

Researchers should cite this work as follows:

• Muhammad Alam (2013), "ECE 695A Lecture 11R: Review Questions," https://nanohub.org/resources/16786.

  BibTex | EndNote

1. course lecture
2. diffusion
3. nanoelectronics
4. nanotransistors
5. NBTI
6. reliability
7. sio2