ECE 612: Nanoscale Transistors (Fall 2008)
This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development of new integrated circuit technologies. The course consists of three parts. Part 1 treats …
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| Abstract | Fall 2008
Please Note: This course is being offered this semester, lectures will be made available as they are produced. This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development of new integrated circuit technologies. The course consists of three parts. Part 1 treats silicon MOS and MOSFET fundamentals as well as second order effects such as gate leakage and quantum mechanical effects. Short channel effects, device scaling, and fabrication processes and reliability are the subject of Part 2. In Part 3, we discuss circuit and systems issues and then examine strained silicon, III-V HEMTs, and nanowire transistors. The use of computer simulation to examine device issues is an integral part of the course. Syllabus: 2008/08/05328/ece612-f08-syllabus.pdf Text:
Course website: cobweb.ecn.purdue.edu/~ee612 |
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