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25 Jul 2014

24 Jul 2014

  • Illinois Tools: PN Junction Long-Base Depletion Approximation

    Featured 24 Jul 2014 in Resources (non-tools)

    Depletion Approximation for a PN Junction
  • ECE 453 Lecture 15b: Basis Functions 2

    Featured 24 Jul 2014 in Resources (non-tools)

    This lecture is available only in video format.
  • Organic Photovoltaics: Experiment and Theory

    Featured 24 Jul 2014 in Resources (non-tools)

    This workshop at the 2010 Users\' Meeting of the Molecular Foundry and the National Center for Electron Microscopy, both DOE-funded Research Centers at Lawrence Berkeley National Laboratory, explored the challenges, opportunities, and recent progress in organic photovoltaics. Dr. Jeffrey B....
  • average velocity vs gate voltage for single and double gate mosfets

    Featured 24 Jul 2014 in Answers

    Asked by Anonymous - 4 years 7 months ago - 1 response

    The injection velocity vs gate voltage curve for the single and double gate mosfets dips to 0 at gate voltages greater than 0.2 volts. But it shows the usual curve for the nanotubes and nanowires. Is it a software bug or am I conceptually wrong?

23 Jul 2014

22 Jul 2014

  • Molecular Structure Tracer

    Featured 22 Jul 2014 in Resources (non-tools)

    This tool provides a high quality display of molecular structures.
  • Theory of Ballistic Nanotransistors

    Featured 22 Jul 2014 in Resources (non-tools)

    Numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors. When two-dimensional electrostatic effects are small, (and when the insulator capacitance is much less than the semiconductor (quantum) capacitance), the model reduces to...
  • Illinois ECE 440: MOS Field-Effect Transistor Homework

    Featured 22 Jul 2014 in Resources (non-tools)

    This homework covers Output Characteristics and Mobility Model of MOSFETs.
  • Boundary conditions in N-AlGaAs-pGaAs heterojunction

    Featured 22 Jul 2014 in Answers

    Asked by Anonymous - 2 years 5 months ago - 0 responses

    I am trying to understand the Boundary conditions being used in ADEPT 2.0. Perhaps this is a Naive question. The example I refer to is the simple AlGaAs-GaAs heterojunction (no illumination) case. I can see that the expression for the electron Quasi Fermi level on the N-AlGaAs side is...

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