Support Options

Submit a Support Ticket

Home Groups Circuits, Circuit Simulation and Compact Models
  • Discoverability Visible
  • Join Policy Open/Anyone
  • Created 17 Dec 2013

Go to the Education Page


Welcome to the Circuits, Circuit Simulation and Compact Models group! If you are a student or practicing engineer or scientist who wants to learn more about circuits, circuit simulation or compact models, or an instructor looking for materials to use in a course, you can find material here that includes complete courses and seminars on specialized topics.

Much of the material is freely accessible by any visitor, but by joining this group, you can participate in discussions on topics of interest to you or work on a project with other group members. Additionally, as a group member you may receive notifications about new materials and events of interest to the circuits group members. Adding events to the group calendar is as easy as clicking on “add event”.

You can create collections of resources within this group that may be of interest to other members.  You can also contribute more substantial resources to nanoHUB through the resource contribution process, and then send a message to the group manager so that links to those resources can be added to this group.

This group contains the following:

Graduate Material

Verilog-A, Present Status and Guidelines

Massachusetts Institute of Technology (2013)
Taught by By Geoffrey Coram
Selected Topics: compact model development and implementations, CMC standard models, Verilog-A performance and problems, Newton-Raphson limiting, coding guidelines

Digital Systems Design Automation

ECE 595Z at Purdue University. 27 Lectures.
Taught by Anand Raghunathan
Selected Topics: advanced Boolean algebra, two-level logic synthesis, Boolean satisfiability, multi-level synthesis, timing analysis, low power design

An Overview of Fourth Fundamental Circuit Element- The Memristor

Written by Tukaram Dattatray Dongale
Selected Topics: memristor, simulation, criticism and application, fourth circuit element, neurocomputing, material implication

Introduction to Compact Models and Circuit Simulation

Purdue University (2013)
Taught by Tianshi Wang, and Jaijeet Roychowdhury
Selected topics: compact model, basic circuit simulation, flows for developing compact models, NEEDS-SPICE

UC Berkeley SPICE3 Tutorial

By Tien-Cheng Bau and Samiha Mourad
SPICE is a general-purpose circuit simulation program for nonlinear dc, nonlinear transient, and linear ac analyses. Circuits may contain passive components (resistors, capacitors, inductors), active devices (transistors and diodes), and independent voltage and current source…, etc. In this tutorial, we will illustrate the use of the simulator with a CMOS inverter.

Simulation Tools

Resistor Color Code

By Robert Benjamin Post, Stella Quinones
University of Texas at El Paso
Apply the color code to determine the resistance value of a resistor or input a resistance value and determine the color code of the resistor.

Series and Parallel

By Emmanuel Jose Ochoa, Stella Quinones
University of Texas at El Paso
Examine the resistance, R, inductance, L, or capacitance, C, of multiple elements in series or in parallel.

Circuit Elements

By Emmanuel Jose Ochoa, Stella Quinones
University of Texas at El Paso
Understand the dependence of resistance, R, inductance, L, and capacitance, C, on physical dimensions and material properties.

Impedance Adder

By Emmanuel Jose Ochoa, Stella Quinones
University of Texas at El Paso
Understand how to calculate the equivalent impedance of circuit elements combined in parallel and/or series, and understand equivalent impedance calculations in rectangular and polar form.


By Robert Benjamin Post, Stella Quinones
University of Texas at El Paso
Convert from Delta to Wye configuration for resistances, and vice versa.


By Stella Quinones, Robert Benjamin Post
University of Texas at El Paso
Visualize and understand the complex numbers represented in both rectangular and polar coordinates.


By Emmanuel Jose Ochoa, Stella Quinones
University of Texas at El Paso
Understand the correct procedure for measuring voltage (V) and current (I), and observe the dependence between the interchange of the leads and the sign of the numerical reading.


By Wei Zhao and Yu Cao
Selected Topics: Predictive Technology Models (PTM), standard circuit simulator, SPICE, Berkeley Predictive Technology Model (BPTM)

PVpanel Sim

By Mario Renteria, Elliott Ivan Gurrola, Sourabh Dongaonkar, Muhammad A. Alam
Selected Topics: two dimensional spice simulation of thin film solar panels, shunt induced variability, partial shadow effects.


By Michael McLennan
Selected Topics: general-purpose circuit simulation program for nonlinear dc, nonlinear transient, and linear ac analysis.

Circuit Simulation Support Materials

SPICE Model of Graphene Nanoribbon FETs with Doped Reservoirs

Taught by Ying-Yu Chen, Artem Rogachev, Amit Sangai, Deming Chen
Selected Topics: modeling, simulation, nanoelectronic devices, SPICE, FET, GNR, Graphene based FET, Graphene nanoribbons

SPICE Models for Magnetic Tunnel Junctions Based on Monodomain Approximation

Taught by Xuanyao Fong, Sri Harsha Choday, Panagopoulos Georgios, Charles Augustine, Kaushik Roy
Selected Topics: magnetic tunnel junction, mrams, SPICE, spin electronics, spin memory

A Methodology for SPICE-compatible Modeling of nanoMOSFETs

Taught by Alba Graciela Avila,and David Espejo
Selected Topics: SPICE-compatible model, high-k, quantum-mechanical effects, Channel Length Modulation (CLM), threshold voltage variation, velocity saturation, MOSFET

The Berkeley Model Development Environment- A MATLAB-based Platform for Modeling and Analyzing Nanoscale Devices and Circuits

Taught by Tianshi Wang, Jaijeet Roychowdhury
Selected Topics: Berkeley Model Development Environment (MDE), MATLAB, analyzing, simulating, testing and debugging fully-general electronic devices and components.


Compact Models

Universal TFET model

Jan 23, 2015 | Contributor(s): Hao Lu, Trond Ytterdal, Alan Seabaugh | doi:10.4231/D3901ZG9H

A universal TFET compact model implemented in verilog-A

mCell Model

Jan 19, 2015 | Contributor(s): David M. Bromberg, Daniel H. Morris | doi:10.4231/D3CR5ND3Q

This model is a hybrid physics/empirical compact model that describes digital switching behavior of an mCell logic devices, where a write current moves a domain wall to switch the resistance of a magnetic tunnel junction between stable states.


Nov 21, 2014 | Contributor(s): Colin McAndrew | doi:10.4231/D3QB9V64G

Compact model for polysilicon (poly) resistors, 3-terminal JFETs, and diffused resistors.

FET pH Sensor Model

Nov 03, 2014 | Contributor(s): Piyush Dak, Muhammad A. Alam | doi:10.4231/D30000150

The FET pH sensor model is a surface potential compact model for FET based pH sensors that accurately describes the physics of electrolyte and surface charges that respond to pH.

Spin Switch Model

Oct 23, 2014 | Contributor(s): Samiran Ganguly, Kerem Yunus Camsari, Supriyo Datta | doi:10.4231/D3C824F8D

We present a circuit/compact model for the Spin Switch created using a Verilog-A based library of "spintronic lego blocks" building upon previous works on spin transport.

MVS Nanotransistor Model (Silicon)

Oct 23, 2014 | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3H12V82S

The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.

Stanford University Resistive-Switching Random Access Memory (RRAM) Verilog-A Model

Oct 23, 2014 | Contributor(s): Zizhen Jiang, H.-S. Philip Wong | doi:10.4231/D37H1DN48

The Stanford University RRAM Model is a SPICE-compatible compact model which describes switching performance for bipolar metal oxide RRAM.

Purdue Nanoelectronics Research Laboratory Magnetic Tunnel Junction Model

Oct 23, 2014 | Contributor(s): Xuanyao Fong, Sri Harsha Choday, Panagopoulos Georgios, Charles Augustine, Kaushik Roy | doi:10.4231/D33R0PV04

This is the Verilog-A model of the magnetic tunnel junction developed by the Nanoelectronics Research Laboratory at Purdue University.

TAG Solar Cell Model (p-i-n thin film)

Oct 23, 2014 | Contributor(s): Sourabh Dongaonkar, Xingshu Sun, Mark Lundstrom, Muhammad A. Alam | doi:10.4231/D3V97ZS4G

The TAG solar cell model is a physics-based compact model for p-i-n thin film solar cells that can be used for panel level simulations.

Stanford 2D Semiconductor (S2DS) Transistor Model

Oct 22, 2014 | Contributor(s): Saurabh Vinayak Suryavanshi, Eric Pop | doi:10.4231/D3QJ78004

The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.

Released Resonant Body Transistor (RBT) Model

Oct 22, 2014 | Contributor(s): Bichoy W. Bahr, Dana Weinstein, Luca Daniel | doi:10.4231/D3KS6J55W

An RBT is a micro-electromechanical (MEM) resonator with a transistor (FET) incorporated into the resonator structure to sense the mechanical vibrations. The model is aimed to present a deep insight into the physics of the RBT.

MIT Virtual Source GaNFET-RF ( MVSG-RF) Model

Oct 22, 2014 | Contributor(s): Ujwal Radhakrishna, Dimitri Antoniadis | doi:10.4231/D3G15TC12

The MVS-G-RF GaN HEMT model is a self-consistent transport/capacitance model for scaled GaN HEMT devices used in RF applications.

III-V Tunnel FET Model

Oct 22, 2014 | Contributor(s): Huichu Liu, Vinay Saripalli, Vijaykrishnan Narayanan, Suman Datta | doi:10.4231/D36H4CR3J

The III-V Tunnel FET Model is a look-up table based model, where the device current and capacitance characteristics are obtained from calibrated TCAD Sentaurus simulation.

Ambipolar Virtual Source Compact Model for Graphene FETs

Oct 22, 2014 | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3MS3K273

This is a compact physics-based ambipolar-virtual-source (AVS) model that describes carrier transport in both unipolar and ambipolar regimes in quasi-ballistic graphene field-effect transistors (GFETs)., a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.