ECE 305 Spring 2015 :  ABET Outcomes and Assessment

Expected Course Outcomes:

A student who successfully fulfills the course requirements will have demonstrated:

(i)     an understanding of the semiconductor bonding and energy band models, of semiconductor carrier properties and statistics, and of carrier action.

(ii)    an ability to apply standard device models to explain/calculate critical internal parameters and standard terminal characteristics of the pn-junction diode and the Schottky diode

(iii)   an ability to apply standard device models to explain/calculate critical internal parameters and standard terminal characteristics of the Metal-Oxide-Semiconductor Field Effect Transistor and the Bipolar Junction Transistor

Assessment:

Exams 1 and 2 will assess outcome (i), exams 3 and 4 will access outcome (ii), and exams 5 and 6 will access outcome (iii).

Process:

Students who do not fulfill each of the three course outcome will receive an incomplete in the course.  A grade will only be assigned when all of the outcomes have been achieved.